(China (Mainland))
Product Summary
The BFG520W/X is an NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. Application areas of the BFG520W/X include cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.
Parametrics
BFG520W/X absolute maximum ratings: (1)collector-base voltage: 20V; (2)collector-emitter voltage: 15V; (3)emitter-base voltage: 2.5V; (4)collector current (DC): 70mA; (5)total power dissipation: 500mW; (6)storage temperature: -65°C to +150°C; (7)junction temperature: 175°C.
Features
BFG520W/X features: (1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.
Diagrams
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 BFG520W/X |
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Negotiable |
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BFG520W/X,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal NPN 70MA 15V 9GHZ |
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